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Microwave Circuits for 24 GHz Automotive Radar in Silicon-based Technologies /
СВЧ-схемы для автомобильных радаров на 24 ГГц в кремниевой технологии

Год: 2010
Автор
: Vadim Issakov / Вадим Исаков
Жанр: Электроника
Издательство: Springer
ISBN: 978-3-642-13597-2, 978-3-642-13598-9
Язык: Английский
Формат: PDF
Качество: Изначально компьютерное (eBook)
Количество страниц: 223
Описание: There are continuous efforts focussed on improving road traffic safety worldwide. Numerous vehicle safety features such as driver assistance systems have been invented. Many driver assistance features rely on radar-based sensors, but are highly-priced. Realization of low-cost radar front-end circuits would enable their implementation in less expensive economy cars, considerably contributing to traffic safety. Cost reduction requires high-level integration of the microwave front-end circuitry, specifically analog and digital circuit blocks co-located on a single chip. The book presents the design, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar technologies. The applicability of a standard digital 0.13 μm CMOS technology for realization of a 24 GHz narrow-band radar front-end sensor is investigated. The presented circuits are suitable for automotive, industrial and consumer applications, as e.g. lane-change assistant, door openers or alarms.
В книге описаны разработки схем СВЧ-приемников диапазона 24 Мгц. Представлены схемы, предназначенные для автомобильных, промышленных и потребительских применения
Опубликовано группой


1 Introduction ................................................... 1
References..................................................... 4
2 Radar Systems ................................................. 5
2.1 RadarPrinciple ............................................ 5
2.2 RadarEquationandSystemConsiderations..................... 6
2.3 CW and Frequency-Modulated Radar . ......................... 8
2.3.1 Doppler Radar . . . . ................................... 8
2.3.2 Frequency-Modulated Radar . . ......................... 9
2.3.2.1 Linear FM Continuous-Wave Radar . . .......... 9
2.4 AngleDetection............................................ 11
2.5 FrequencyRegulations...................................... 12
2.6 Receiver Architectures . . . ................................... 14
2.6.1 Homodyne . . ........................................ 14
2.6.2 Heterodyne . ........................................ 15
2.7 StatusofAutomotiveRadarSystems .......................... 16
2.8 Technology Requirements for Radar Chipset .................... 17
References..................................................... 17
3 CMOS and Bipolar Technologies ................................ 19
3.1 CMOS Technology . ........................................ 19
3.1.1 MOSFET Layout and Modeling Considerations . .......... 20
3.1.2 DevicesAvailableinC11N............................ 22
3.2 BipolarTransistors ......................................... 23
3.2.1 HBT Layout and Modeling Considerations . .............. 24
3.2.2 DevicesAvailableinB7HF200 ........................ 25
3.3 Technology Comparison. . ................................... 26
3.3.1 TransistorPerformance ............................... 26
3.3.2 Metallization and Passive Components . . . ............... 29
References..................................................... 31
4 Modeling Techniques ........................................... 33
4.1 Analytical Fitting of On-Chip Inductors . . . . .................... 33
4.1.1 Series Branch Parameters Fitting . . . .................... 36
4.1.2 Shunt Branches Parameters Fitting . . .................... 38
4.1.3 ResultsVerification .................................. 40
4.2 TransistorFingerCapacitanceEstimation ...................... 42
References..................................................... 45
5 Measurement Techniques ....................................... 47
5.1 S-parameterDe-embeddingTechniques........................ 48
5.1.1 Extension of Thru Technique for De-embedding of
AsymmetricalErrorNetworks ......................... 49
5.1.1.1 Theory..................................... 49
5.1.1.2 ResultVerification........................... 52
5.1.2 De-embedding of Differential Devices using
cascade-basedTwo-PortTechniques.................... 54
5.1.2.1 Theory..................................... 54
5.1.2.2 ResultVerification........................... 60
5.2 DifferentialMeasurementsusingBaluns ....................... 63
5.2.1 TheoreticalAnalysis ................................. 64
5.2.1.1 Back-to-BackMeasurement ................... 65
5.2.1.2 DUTMeasurement........................... 67
5.2.1.3 InsertionLossDe-embeddingError............. 68
5.2.2 MeasurementVerification............................. 69
References..................................................... 74
6 Radar Receiver Circuits ........................................ 77
6.1 Low-NoiseAmplifiers ...................................... 78
6.1.1 LNA in CMOS Technology . . ......................... 78
6.1.2 LNA in SiGe:C Technology . . ......................... 83
6.1.3 MeasurementsofCMOSandSiGeLNAs................ 86
6.1.4 LNAResultsSummaryandComparison................. 91
6.2 Mixers.................................................... 92
6.2.1 ActiveMixers....................................... 93
6.2.1.1 Active Mixer in CMOS Technology . . .......... 93
6.2.1.2 Active Mixer in SiGe Technology .............. 95
6.2.1.3 Measurements of CMOS and SiGe Active Mixers . 97
6.2.1.4 Active Mixers Results Summary and Comparison . 101
6.2.2 PassiveMixers ......................................102
6.2.2.1 Passive Resistive Ring Mixer in CMOS
Technology . . . ..............................102
6.2.2.2 Passive Bipolar Mixer in SiGe Technology ......105
6.2.2.3 Measurements of CMOS and SiGe Passive Mixers 107
6.2.2.4 Passive Mixers Results Summary and Comparison 110
6.2.3 ComparisonofActiveandPassiveMixers ...............111
6.3 Single-Channel Receivers ...................................112
6.3.1 Design of Active and Passive Receivers in CMOS. . . ......113
6.3.2 Receiver Measurements and Analysis ...................113
6.3.2.1 ChipSize...................................114
6.3.2.2 PowerConsumption,GainandNoiseFigure .....114
6.3.2.3 Linearity ...................................116
6.3.2.4 RequiredLOPower ..........................118
6.3.2.5 Isolation....................................119
6.3.2.6 TemperaturePerformance.....................120
6.3.3 Receiver Results Summary and Comparison. . . . ..........121
6.4 IQ Receivers . .............................................122
6.4.1 Design of IQ Receivers . ..............................122
6.4.1.1 IQ Receiver in CMOS Technology . . . ..........122
6.4.1.2 IQ Receiver in SiGe Technology ...............124
6.4.2 IQ Receiver Measurements . . . .........................125
6.4.3 IQ Receiver Results Summary and Comparison . ..........131
6.5 IntegratedPassiveCircuits...................................132
6.5.1 Circuit Design and Layout Considerations ...............132
6.5.1.1 On-Chip 180◦
Power Splitter/Combiner . . . ......132
6.5.1.2 On-Chip 90◦ Power Splitter/Combiner ..........134
6.5.1.3 On-Chip 180◦ Hybrid Ring Coupler . . ..........136
6.5.2 RealizationandMeasurementResults ...................137
6.5.2.1 On-Chip 180◦ Power Splitter/Combiner . . . ......137
6.5.2.2 On-Chip 90◦ Power Splitter/Combiner ..........138
6.5.2.3 On-Chip 180◦ Hybrid Ring Coupler . . ..........140
6.5.3 ResultsSummaryandDiscussion.......................143
6.6 Circuit-LevelRFESDProtection .............................144
6.6.1 OverviewofCircuit-LevelProtectionTechniques.........145
6.6.2 Virtual Ground Concept ..............................147
6.6.2.1 ConceptVerificationbyCircuitSimulation ......149
6.6.2.2 ConceptVerificationbyHBMMeasurement .....150
6.6.2.3 ConceptVerificationbyTLPMeasurement ......151
6.6.3 TransformerProtectionConcept........................153
6.6.3.1 TestLNACircuitDesign......................155
6.6.3.2 TestLNARealizationandMeasurement.........156
6.6.3.3 ConceptVerificationbyTLPMeasurement ......157
References.....................................................158
7 Radar Transceiver Circuits .....................................165
7.1 IQTransceiverinCMOS ....................................166
7.1.1 IQTransceiverCircuitDesign .........................166
7.1.2 MeasurementsofTransceiver..........................169
7.1.3 ResultsSummaryandComparison......................171
7.2 MergedPower-Amplifier-MixerTransceiver....................173
7.2.1 SystemConsiderations................................173
7.2.2 Power-Amplifier-MixerCircuitDesign..................174
7.2.3 PAMIXMeasurements ...............................176
7.2.4 ResultsSummaryandComparison......................179
References.....................................................180
8 Conclusions and Outlook .......................................181
A LFMCW Radar ................................................185
References.....................................................188
B FSCWRadar ..................................................189
References.....................................................190
C Surface ChargeMethod.........................................191
C.1 SurfaceChargeMethodTheory...............................191
C.2 Meshing of the Multifinger Layout . . . .........................194
D Measurement of Active Circuits .................................197
D.1 MeasurementTechniques....................................197
D.2 LNACharacterization.......................................200
D.2.1 S-parameterMeasurement.............................200
D.2.2 NoiseFigureMeasurement ............................200
D.2.3 LinearityMeasurement ...............................202
D.3 Mixer and Receiver Characterization . .........................203
D.3.1 Conversion Gain Measurement . ........................203
D.3.2 NoiseFigureMeasurement ............................203
D.3.3 LinearityMeasurement ...............................204
References.....................................................205
Index .............................................................207
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